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| BD533FP BD534FP COMPLEMENTARY SILICON POWER TRANSISTORS s s s BD534FP IS SGS-THOMSON PREFERRED SALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded isolated package, intented for use in medium power linear and switching applications. The complementary PNP type is BD534FP. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CES V CEO V EBO I C, I E IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector and Emitter Current Base Current Total Dissipation at T c 25 C o Value BD533FP BD534FP 45 45 45 5 8 1 25 -65 to 150 150 Uni t V V V V A A W o o Storage Temperature Max. O perating Junction Temperature C C For PNP types voltage and current values are negative. April 1998 1/4 BD533FP / BD534FP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 5.1 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CES I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = 45 V V CE = 45 V V EB = 5 V I C = 100 mA 45 Min. Typ . Max. 100 100 1 Un it A A mA V V CEO(sus ) Collector-Emitter Sustaining Voltage (IB = 0) V CE(sat ) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain IC = 2 A IC = 6 A IC = 2 A I C = 10 mA I C = 500 mA IC = 2 A I C = 500 mA I B = 0.2 A I B = 0.6 A V CE = 2 V V CE = 5 V V CE = 2 V V CE = 2 V V CE = 1 V 20 40 25 3 0.8 0.8 1.5 V V V fT Transition frequency 12 MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas 2/4 BD533FP / BD534FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 G 3/4 BD533FP / BD534FP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4 |
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